- Title
- Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells
- Creator
- Allen, Thomas G.; Zheng, Peiting; Vaughan, Ben; Barr, Matthew; Wan, Yimao; Samundsett, Christian; Bullock, James; Cuevas, Andres
- Relation
- 43rd IEEE Photovoltaic Specialists Conference (PVSC). 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (Portland, OR 05-10 June, 2016) p. 230-233
- Publisher Link
- http://dx.doi.org/10.1109/PVSC.2016.7749584
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Resource Type
- conference paper
- Date
- 2016
- Description
- It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium (φ ~2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm ² can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO₂ interlayer, leading the way to the development of a passivated contact device utilizing TiO₂ and Ca.
- Subject
- low resistance; TiO₂-passivated calcium contacts; crystalline silicon; solar cells
- Identifier
- http://hdl.handle.net/1959.13/1449121
- Identifier
- uon:43580
- Identifier
- ISBN:9781509027255
- Language
- eng
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